Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1995-06-07
1997-08-05
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257734, 257620, 257 48, 257536, 257204, 257786, 371 211, 371 215, G01R 3100, G01R 3128, H01L 2166
Patent
active
056545886
ABSTRACT:
Wafer level testing of a wafer (500) is accomplished by dividing the integrated circuits of the wafer into a plurality of segmented bus regions (514, 516, and 518 for example). Each bus region is formed having its own set of test conductors (520-530) wherein each set of test conductors are isolated from all other sets of test conductors on the wafer. Each test conductor has at least one contact pad (531-546) where each contact pad lies within a periphery of the integrated circuits' active areas. By forming pads over ICs and by sub-dividing the bus structure of test conductive lines, more high powered ICs can be tested in a wafer-level manner with fewer problems associated with speed, power, throughput, and routing problems.
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Ballouli Walid S.
Bollish Robert W.
Burton Marcus R.
Carlquist James H.
Cheng Shih King
Crane Sara W.
Motorola Inc.
Williams Alexander Oscar
Witek Keith E.
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