Apparatus for metal plasma vapor deposition and re-sputter...

Details Apparatus for metal plasma vapor deposition and re-sputter... Apparatus for metal plasma vapor deposition and re-sputter...

2008-07-15

2008-07-15

Paschall, Mark H (Department: 3742)

Electric heating

Metal heating

By arc

C219S121410, C219S121520, C118S7230IR, C204S298380, C315S111510

Reexamination Certificate

active

07399943

ABSTRACT:
A plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber. A process gas inlet is coupled to the chamber and a process gas source coupled to the process gas inlet. The reactor further includes a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency suitable for exciting kinetic electrons, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.

REFERENCES:
patent: 3461054 (1969-08-01), Vratney
patent: 3661758 (1972-05-01), Jackson et al.
patent: 4539068 (1985-09-01), Takagi et al.
patent: 4837185 (1989-06-01), Yau et al.
patent: 4963239 (1990-10-01), Shimamura et al.
patent: 4999096 (1991-03-01), Nihei et al.
patent: RE34106 (1992-10-01), Ohmi
patent: 5308793 (1994-05-01), Taguchi et al.
patent: 5486492 (1996-01-01), Yamamoto et al.
patent: 5507930 (1996-04-01), Yamashita et al.
patent: 5510011 (1996-04-01), Okamura et al.
patent: 5656123 (1997-08-01), Salimian et al.
patent: 5933753 (1999-08-01), Simon et al.
patent: 5933973 (1999-08-01), Fenley, Jr.
patent: 5976327 (1999-11-01), Tanaka
patent: 5986762 (1999-11-01), Challener
patent: 6051114 (2000-04-01), Yao et al.
patent: 6080285 (2000-06-01), Liu et al.
patent: 6197167 (2001-03-01), Tanaka
patent: 6216632 (2001-04-01), Wickramanayaka
patent: 6221221 (2001-04-01), Al-Shaikh et al.
patent: 6228236 (2001-05-01), Rosenstein et al.
patent: 6251242 (2001-06-01), Fu et al.
patent: 6274008 (2001-08-01), Gopalraja et al.
patent: 6277249 (2001-08-01), Gopalraja et al.
patent: 6287977 (2001-09-01), Hashim et al.
patent: 6309978 (2001-10-01), Donohoe et al.
patent: 6350353 (2002-02-01), Gopalraja et al.
patent: 6352620 (2002-03-01), Yu et al.
patent: 6377060 (2002-04-01), Burkhart et al.
patent: 6436251 (2002-08-01), Gopalraja et al.
patent: 6444104 (2002-09-01), Gopalraja et al.
patent: 6444137 (2002-09-01), Collins et al.
patent: 6451177 (2002-09-01), Gopalraja et al.
patent: 6462482 (2002-10-01), Wickramanayaka et al.
patent: 6485617 (2002-11-01), Fu et al.
patent: 6485618 (2002-11-01), Gopalraja et al.
patent: 6488807 (2002-12-01), Collins et al.
patent: 6498091 (2002-12-01), Chen et al.
patent: 6518195 (2003-02-01), Collins et al.
patent: 6545420 (2003-04-01), Collins et al.
patent: 6554979 (2003-04-01), Stimson
patent: 6559061 (2003-05-01), Hashim et al.
patent: 6652718 (2003-11-01), D'Couto et al.
patent: 6660622 (2003-12-01), Chen et al.
patent: 6709987 (2004-03-01), Hashim et al.
patent: 6755945 (2004-06-01), Yasar et al.
patent: 6787006 (2004-09-01), Gopalraja et al.
patent: 2001/0023822 (2001-09-01), Koizumi et al.
patent: 2001/0050220 (2001-12-01), Chiang et al.
patent: 2002/0004309 (2002-01-01), Collins et al.
patent: 2002/0104751 (2002-08-01), Drewery et al.
patent: 2003/0116427 (2003-06-01), Ding et al.
patent: 2004/0025791 (2004-02-01), Chen et al.
patent: 2004/0188239 (2004-09-01), Robison et al.
patent: 2006/0073283 (2006-04-01), Brown et al.
patent: 2006/0073690 (2006-04-01), Brown et al.
patent: 0782172 (1997-07-01), None
patent: 0799903 (1997-10-01), None
patent: 0807954 (1997-11-01), None
patent: 0841683 (1998-05-01), None
patent: 0878825 (1998-11-01), None
patent: 1094493 (2001-04-01), None
patent: 1128414 (2001-08-01), None
patent: 1146543 (2001-10-01), None
Wickramanayaka, S., et al., “Using I-PVD for copper-based interconnects,”Solid State Technology, Oct. 2002, pp. 67-74.
U.S. Appl. No. 10/693,775, filed Oct. 25, 2003 entitled Tantalum Barrier Layer for Copper Metallization by Ling Chen, et al.
U.S. Appl. No. 10/761,466, filed Jan. 21, 2004 entitled Method and Apparatus for Forming Improved Metal Interconnects by Imran Hashim, et al.
U.S. Appl. No. 10/934,231, filed Sep. 3, 2004 entitled Multi-Step Magnetron Sputtering Process by Praburam Gopalraja, et al.
Boyle, P.C., et al., “Independent control of ion current and ion impact energy onto electrodes in dual frequency plasma devices”,Journal of Physics D: Applied Physics, 2004, pp. 697-701, vol. 37, Institute of Physics Publishing, United Kingdom.

Affiliated with

Also associated with

Rating

Apparatus for metal plasma vapor deposition and re-sputter... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for metal plasma vapor deposition and re-sputter..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for metal plasma vapor deposition and re-sputter... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2749624