Apparatus for generating gas plasma, gas composition for...

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With radio frequency antenna or inductive coil gas...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C118S7230IR, C118S7230AN, C156S345480

Reexamination Certificate

active

08083892

ABSTRACT:
A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.

REFERENCES:
patent: 4213043 (1980-07-01), Dawson
patent: 4797178 (1989-01-01), Bui et al.
patent: 4810935 (1989-03-01), Boswell
patent: 4996077 (1991-02-01), Moslehi et al.
patent: 5260600 (1993-11-01), Harada
patent: 5270515 (1993-12-01), Long
patent: 5458754 (1995-10-01), Sathrum et al.
patent: 5648701 (1997-07-01), Hooke et al.
patent: 6001420 (1999-12-01), Mosely et al.
patent: 6204510 (2001-03-01), Ohkawa
patent: 6263830 (2001-07-01), Kamarehi et al.
patent: 6391769 (2002-05-01), Lee et al.
patent: 6392351 (2002-05-01), Shun'ko
patent: 6414648 (2002-07-01), Holland et al.
patent: 6432820 (2002-08-01), Lee et al.
patent: 6692622 (2004-02-01), Colpo et al.
patent: 2002/0009885 (2002-01-01), Brankner et al.
patent: 2003/0071035 (2003-04-01), Brailove
patent: 2003/0085205 (2003-05-01), Lai et al.
patent: 2003/0168430 (2003-09-01), Shyu et al.
patent: 19938824 (2001-09-01), None
patent: 10102745 (2002-08-01), None
patent: 0 898 308 (1999-02-01), None
patent: 58192390 (1983-11-01), None
patent: 6293980 (1994-10-01), None
patent: 8323873 (1996-12-01), None
patent: 11288923 (1999-10-01), None
patent: 1998079855 (1998-11-01), None
patent: 20010049697 (2001-06-01), None
patent: 1020020061451 (2002-07-01), None
patent: 10-2003-0017729 (2003-03-01), None
patent: 503433 (2002-09-01), None
Korean Office Action dated Oct. 28, 2004 (English translation provided).
Chinese Office Action dated Apr. 24, 2009, in corresponding Chinese Application No. 97132168.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus for generating gas plasma, gas composition for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for generating gas plasma, gas composition for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for generating gas plasma, gas composition for... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4313329

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.