Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1997-10-06
2000-10-24
Nelms, David
Coating apparatus
Gas or vapor deposition
Multizone chamber
118726, 438649, 438654, 438655, 438675, 257754, 257758, 257767, 257768, C23C 1600
Patent
active
061360953
ABSTRACT:
The present invention pertains to a carrier layer and a contact enabled by the carrier layer which enables the fabrication of aluminum (including aluminum alloys and other conductive materials having a similar melting point) electrical contacts in multilayer integrated circuit vias, through holes, or trenches having an aspect ratio greater than one. In fact, the structure has been shown to enable such contact fabrication in vias, through holes, and trenches having aspect ratios as high as at least 5:1, and should be capable of filing apertures having aspect ratios up to about 12:1. The carrier layer, in addition to permitting the formation of a conductive contact at high aspect ratio, provides a diffusion barrier which prevents the aluminum from migrating into surrounding substrate material which operates in conjunction with the electrical contact. The carrier layer preferably comprises a layer formed by ionizing the flux of sputter deposition material, partially reacting the flux with a gas, and depositing the resulting material on a substrate.
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Forster John
Xu Zheng
Yao Tse-Yong
Applied Materials Inc.
Berry Renee R.
Church Shirley L.
Nelms David
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