Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Patent
1994-04-13
1995-06-06
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
257431, 437 8, 324451, 324501, 356237, 374 45, G01R 3100
Patent
active
054224985
ABSTRACT:
The invention provides an apparatus for diagnosing a void within a conductive material for interconnections of semiconductor integrated circuits. A laser beam irradiating section is provided for supplying a thermal wave to interconnections of the semiconductor integrated circuits to cause a rise of a temperature of the conductive material due to a thermal accumulation around a void within the conductive material, the thermal wave supplying section being able to move in a plane for accomplishment of a scanning operation of the thermal wave supply. A voltage applying section is connected to the interconnections. A current detecting section is connected to the interconnections for detecting an amount of an electrical current flowing through any part of the interconnections to sense a variation of the amount thereof on account of the rise of the temperature of the conductive material due to the thermal accumulation around the void within the conductive material so as to detect any void within the conductive material.
REFERENCES:
patent: 4874251 (1989-10-01), Thomas et al.
patent: 5042952 (1991-08-01), Opsal et al.
patent: 5049811 (1991-09-01), Dreyer et al.
By K. Haraguchi, "Detection of defect point and failure analysis in semiconductor devices", pp. 140-144 and English abstract. Date and journal of publication unknown.
By W. Smith et al., "Direct Measurement of Stress-Induced Void Growth by Thermal Wave Modulated Optical Reflectance Imaging", pp. 200-209; 1990 IRPS, date of publication unknown.
Hanagama Yasuko
Nakamura Toyokazu
Nikawa Kiyoshi
Crane Sara W.
NEC Corporation
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