Apparatus for depositing material into high aspect ratio holes

Details Apparatus for depositing material into high aspect ratio holes Apparatus for depositing material into high aspect ratio holes

1991-09-25

1993-01-12

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429806, 20429808, 20429821, C23C 1434

Patent

active

051787393

ABSTRACT:
A sputter deposition system includes a hollow, cylindrical sputter target 14 disposed between an end sputter target 12 and a substrate 19, all of which are contained in a vacuum chamber 20. A plurality of magnets 24 are disposed outside the chamber 24 to create intense, plasma regions 48 near the interior surface of the cylindrical target 14 and thereby causing ionization of sputtered neutrals. Rf power is inductively coupled into the chamber 24 through rf coil 16 to sustain the plasma and substrate 19 is electrically biased to control ion directionality and energy.

REFERENCES:
patent: 4727293 (1988-02-01), Asmussen
patent: 4911814 (1990-03-01), Matsuoka et al.
patent: 4925542 (1990-05-01), Kidd
patent: 4941915 (1990-07-01), Matsuoka et al.
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5022977 (1991-06-01), Matsuoka et al.
Yamashita, "Fundamental . . . apparatus", J. Vac. Sci., Technol., A7(2), Mar./Apr. 1989, pp. 151-158.

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