Apparatus for controlling etch rate when using consumable electr

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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118723E, 118712, C23F 102, C23C 1600

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active

060304898

ABSTRACT:
A method and apparatus to improve process control during plasma etching of semiconductor substrates. Improvements are directed towards controlling the rate of etching when using consumable electrodes. Consumable electrode materials are used to increase selectivity in certain plasma etching processes as in via. contact. or in SOG etch. A consumable electrode material has a significant effect on processing time due to changing gap dimension between electrodes. This invention teaches how to adjust for process variables by using feedback from two strategically placed pressure manometers.

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