Apparatus for controlling backside gas pressure beneath a semico

Details Apparatus for controlling backside gas pressure beneath a semico Apparatus for controlling backside gas pressure beneath a semico

1996-12-30

1998-05-05

Fleming, Fritz

Electricity: electrical systems and devices

Electric charge generating or conducting means

Use of forces of electric charge or field

H02N 1300

Patent

active

057484350

ABSTRACT:
Apparatus for providing self-regulated gas flow between a wafer and a wafer support surface of a wafer support in a semiconductor wafer processing system. The apparatus consists of a gas inlet port extending through the wafer support for supplying gas to the wafer support surface and a plurality of exhaust ports, extending from the support surface through the wafer support, for exhausting the gas from the support surface, where the plurality of exhaust ports maintain a uniform backside gas pressure between the wafer and the wafer support surface.

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