Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Patent
1998-05-20
2000-07-25
Dang, Thi
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
25049221, H01L 21425
Patent
active
060936258
ABSTRACT:
An apparatus and method for implanting a desired chemical species in a semiconductor substrate. The apparatus comprises a target chamber, a holder to hold a substrate in the target chamber for implantation, a pump to pump the target chamber down to a desired pressure, a pressure lock to enable a substrate to be passed into the target chamber for loading on the holder while the target chamber is at sub-atmospheric pressure, an ion beam generator for generating and directing a beam of ions containing said desired species at a surface of a substrate on said holder, and a reactive gas supply to feed a reactive gas into the target chamber while the chamber is maintained by the pump at the desired pressure, to provide a desired partial pressure of the reactive gas in the target chamber to reactive with and volatilise unwanted contaminants on surfaces in the target chamber.
REFERENCES:
patent: 4512812 (1985-04-01), Liebert et al.
patent: 5308989 (1994-05-01), Brubaker
patent: 5312519 (1994-05-01), Sakai et al.
patent: 5354698 (1994-10-01), Cathey, Jr.
patent: 5466942 (1995-11-01), Sakai et al.
patent: 5554854 (1996-09-01), Blake
patent: 5633506 (1997-05-01), Blake
J. Deleu et al., "The behaviour of Si and CoSi.sub.2 during low energy nitrogen bombardment, with and without O.sub.2 -flooding, " Nuclear Instruments and Methods on Physics Research, B 113 (1996) pp. 537-538.
Adibi Babak
Castle Matthew D. Scotney
Wagner Dennis W.
Wauk, II Michael T.
Applied Materials Inc.
Dang Thi
Tennant Boult Wade
LandOfFree
Apparatus for and methods of implanting desired chemical species does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus for and methods of implanting desired chemical species, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for and methods of implanting desired chemical species will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1335973