Apparatus for and method of surface treatment for microelectroni

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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156643, 427589, 427575, 118723FI, 118723R, 118723MW, 118723I, 20429804, 20429834, 20429836, H01L 2100

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active

052845443

ABSTRACT:
An apparatus for surface treatment according to the present invention used for carrying out dry etching, thin film deposition and so forth is provided with a neutral beam etching apparatus in order to improve etching rate. In an embodiment, microwave wave-guides forming a duplex tube, a discharge tube, a pair of solenoids arranged coaxially, a multiaperture electrode for extracting an ion beam, gas supply pipes, a set of charged particle retarding grids, a device for controlling temperature of a specimen and a vacuum unit are provided.

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Journal Of Electrochemical Society, Solid-State Science and Technology, vol. 126, Jun. 1979, pp. 1024-1028, Manchester, US; K. Suzuki et al. "The roles of ions and neutral active species in microwav plasma etching".
Japanese Journal Of Applied Physics, B-1-2, 1989; 21st Conference On Solid State Devices And Materials, Tokyo, 28-30 Aug. 1989, pp. 153-156; K. Nojiri et al.: "Microwave plasma etching of silicon dioxide for half-micron ULSIs".
"Directional Reactive Ion Etching at Oblique Angles"; by Boyd et al.; Appl. Phys. Lett. 36(7), pp. 583-585.

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