Apparatus and process for increasing uniformity of sputtering ra

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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Details

20429811, 20429812, 20429818, C23C 1434

Patent

active

055386032

ABSTRACT:
An improvement in a sputter deposition apparatus and process for sputtering is described wherein the surface of the sputtering target, adjacent its outer edge, is provided with a taper which reduces the redeposition rate thereon of back scattered atoms previously sputtered from the target surface. When the sputtering apparatus includes a magnetron, the modified target acts to decrease the distance of the ions in the plasma from the magnetron to thereby increase the deposition rate adjacent the tapered portion of the target. The angle of the tapered portion of the target, with respect to the central portion of the target surface, must be at least about 30.degree., and preferably varies from about 35.degree. to about 70.degree., and most preferably from about 40.degree. to about 60.degree.. In a preferred embodiment, a second taper extends outwardly of the first taper to provide a more uniform gap between the outer edge of the target and the portion of the shield parallel to the wall of the sputtering apparatus. The angle of the second tapered surface will range from about 70.degree. to about 85.degree., with respect to the central portion of the target surface, preferably from about 75.degree. to about 83.degree., and typically from about 78.degree. to about 80.degree.. That is the angle of the outermost tapered surface on the sputtering target, with respect to a plane perpendicular to the central portion of the target surface, may vary from about 5.degree. to about 20.degree., preferably from about 7.degree. to about 15.degree., and typically from about 10.degree. to about 12.degree..

REFERENCES:
patent: 3630881 (1971-12-01), Lester et al.
patent: 3985635 (1976-10-01), Adam et al.
patent: 4551216 (1985-11-01), Argyo
patent: 5133850 (1992-07-01), Kukla et al.

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