Apparatus and method of manufacturing semiconductor device

Coating apparatus – Gas or vapor deposition – Crucible or evaporator structure

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

118715, 118719, 118300, 261142, 261 16, 427250, C23C 1600, H01L 2160

Patent

active

055296343

ABSTRACT:
An evaporation chamber for forming fine metal particles is separated from a film formation chamber in which the substrate having a metal film such as a metal column thereon is placed during metal film deposition. The pressure of the film formation chamber is set to be lower than that of the evaporation chamber, and the fine metal particles are sprayed on the substrate by the pressure difference to form the metal column. Therefore, a wiring layer, a connection electrode for connecting the wiring layer to another wiring layer, and the like can easily be formed by a small number of steps.

REFERENCES:
patent: 4389973 (1983-06-01), Suntola
patent: 4582731 (1986-04-01), Smith
patent: 4714047 (1987-12-01), Ikeda
patent: 4848273 (1989-07-01), Mori
patent: 5328078 (1994-07-01), Okumura

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus and method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus and method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2186256

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.