Apparatus and method of forming silicide in a localized manner

Details Apparatus and method of forming silicide in a localized manner Apparatus and method of forming silicide in a localized manner

2004-10-12

2008-10-21

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S015000, C438S268000

Reexamination Certificate

active

07439168

ABSTRACT:
Localized trenches or access holes are milled in a semiconductor substrate to define access points to structures of an integrated circuit intended for circuit editing. A conductor is deposited, such as with a focused ion beam tool, in the access holes and a localized heat is applied to the conductor for silicide formation, especially at the boundary between a semiconductor structure, such as diffusion regions, and the deposited conductor. Localized heat may be generated at the target location through precise laser application, current generation through the target location, or a combination thereof.

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