Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2004-09-08
2008-08-26
Chambliss, Alonzo (Department: 2892)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S778000, C438S078000, C977S724000, C977S762000, C977S767000, C977S856000
Reexamination Certificate
active
07416993
ABSTRACT:
Nanowire articles and methods of making the same are disclosed. A conductive article includes a plurality of inter-contacting nanowire segments that define a plurality of conductive pathways along the article. The nanowire segments may be semiconducting nanowires, metallic nanowires, nanotubes, single walled carbon nanotubes, multi-walled carbon nanotubes, or nanowires entangled with nanotubes. The various segments may have different lengths and may include segments having a length shorter than the length of the article. A strapping material may be positioned to contact a portion of the plurality of nanowire segments. The strapping material may be patterned to create the shape of a frame with an opening that exposes an area of the nanowire fabric. Such a strapping layer may also be used for making electrical contact to the nanowire fabric especially for electrical stitching to lower the overall resistance of the fabric.
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Bertin Claude L.
Rueckes Thomas
Segal Brent M.
Chambliss Alonzo
Nantero Inc.
Wilmer Cutler Pickering Hale and Dorr LLP
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