Error detection/correction and fault detection/recovery – Pulse or data error handling – Memory testing
Reexamination Certificate
2007-01-16
2007-01-16
Decady, Albert (Department: 2138)
Error detection/correction and fault detection/recovery
Pulse or data error handling
Memory testing
C714S042000, C714S721000, C714S745000, C365S158000, C365S209000
Reexamination Certificate
active
10995216
ABSTRACT:
In an apparatus for analyzing a magnetic random access memory (MRAM), and a method of analyzing an MRAM, the apparatus includes an MRAM mounting unit on which an MRAM is mounted, a magnetic field applying unit positioned around the MRAM mounting unit for applying an external magnetic field to the MRAM mounted on the MRAM mounting unit, a cell addressing unit for selecting one of a plurality of unit cells of the MRAM mounted on the MRAM mounting unit, a source measurement unit for applying an internal magnetic field to the selected unit cell of the MRAM or for measuring a resistance of the selected unit cell of the MRAM, and a computer unit for storing and for analyzing data regarding the measured resistance of the each of the plurality of unit cells of the MRAM.
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Hwang In-jun
Kim Tae-wan
Park Wan-jun
De'cady Albert
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
Trimmings John P
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