Apparatus and method for testing defects

Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed

Reexamination Certificate

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Details

C438S016000, C250S492100, C250S492200, C356S237100

Reexamination Certificate

active

07037735

ABSTRACT:
A defect inspection method includes radiating an illumination slit-shaped beam having lights substantially parallel to a longitudinal direction to a substrate having circuit patterns in a direction inclined at a predetermined gradient relative to the direction of a line normal to the substrate and inclined at a predetermined gradient on a surface with respect to a group of main straight lines of the circuit patterns with its longitudinal direction oriented almost perpendicularly to a direction of a movement of the substrate. Scattered light reflected by a defect such as a foreign particle existing on the illuminated substrate is received and converted into a detection signal by using an image sensor, and defect judging is effected of an extracted a signal indicating a defect such as a foreign particle on the basis of the detection signal output.

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