Apparatus and method for removing photoresist from a substrate

Details Apparatus and method for removing photoresist from a substrate Apparatus and method for removing photoresist from a substrate

2003-11-14

2008-10-07

Alanko, Anita K (Department: 1792)

Etching a substrate: processes

Gas phase and nongaseous phase etching on the same substrate

C216S058000, C216S062000, C216S083000, C438S704000, C438S725000, C438S734000, C438S906000

Reexamination Certificate

active

07431855

ABSTRACT:
An apparatus and method for removing photoresist from a substrate, which includes treating the photoresist with a first reactant to cause swelling, cracking or delamination of the photoresist, treating the photoresist with a second reactant to chemically alter the photoresist, and subsequently removing the chemically altered photoresist with a third reactant. In one example, the first reactant is supercritical carbon dioxide (SCCO2), the second reactant is ozone vapor, and the third reactant is deionized water.

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