Apparatus and method for reactive ion etching

Details Apparatus and method for reactive ion etching Apparatus and method for reactive ion etching

1989-08-03

1990-08-21

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

156345, 20429834, 20429837, C23F 404

Patent

active

049503774

ABSTRACT:
The apparatus includes a means for generating a magnetic field at a first electrode to which a high frequency voltage is applied and includes a generator for generating a rectangular low frequency voltage that is capacitively coupled to a second electrode which carries the substrate to be etched. The low frequency voltage comprises a negative half-wave having a short duration and a positive half-wave. The duration of the negative half-wave is selected to be shorter than a time constant for charging the substrate after a potential change corresponding to the amplitude of the half-wave and the positive half-wave is dimensioned so that the substrate remains free of charges on the average.

REFERENCES:
patent: 4526643 (1985-07-01), Okano et al.
patent: 4572759 (1986-02-01), Benzing
patent: 4585516 (1986-04-01), Corn et al.
patent: 4618477 (1986-10-01), Babu et al.
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4808258 (1989-02-01), Otsubo et al.
patent: 4842707 (1989-06-01), Kinoshita
J. W. Coburn, "Plasma Etching and Reactive Ion Etching", pp. 1-23, AVS Monograph Series (1982).

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