Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2011-06-07
2011-06-07
Vinh, Lan (Department: 1713)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C216S058000, C216S067000, C438S708000, C438S710000
Reexamination Certificate
active
07955513
ABSTRACT:
A method for shaping a surface of a workpiece, comprises positioning at least one of a workpiece and an inductively-coupled plasma (ICP) torch including three concentrically arranged tubes. A plasma gas is introduced to an outer tube of the ICP torch and energy is transferred from a radio frequency (RF) power source to the plasma gas to generate an excitation zone at least partially downstream of the ICP torch. A reactive reactive precursor is introduced to the excitation zone, and an auxiliary gas is introduced to the intermediate tube to control a position of the excitation zone relative to the ICP torch so that a controlled distribution of reactive species is formed. The surface is shaped by removing material from the surface of the workpiece with at least a portion of the reactive species and adding material to the surface of the workpiece with at least a portion of the reactive species.
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Supplementary European Search Report, EP Application No. 02706029.2 mailed Mar. 5, 2008, 4 pages.
Fliesler & Meyer LLP
Rapt Industries Inc.
Vinh Lan
LandOfFree
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