Apparatus and method for partial ion implantation

Details Apparatus and method for partial ion implantation Apparatus and method for partial ion implantation

2006-06-09

2009-02-10

Vanore, David A. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S442110

Reexamination Certificate

active

07488959

ABSTRACT:
Disclosed herein is an apparatus and method for partial ion implantation. The apparatus includes a wafer support, an ion beam irradiator capable of generating and irradiating an ion beam entering the wafer, and an ion beam exposure adjustor to adjust exposure of the wafer with respect to the ion beam according to regions of the wafer by setting an exposure opening via combination of ion beam shields for blocking the ion beam with respect to the wafer. The exposure opening enables the wafer to be partially exposed to the ion beam irradiated therethrough. With this apparatus, effective partial ion implantation can be performed to compensate variation of a threshold voltage Vt in a channel of a transistor, thereby providing more uniform characteristics of the transistor.

REFERENCES:
patent: 5134301 (1992-07-01), Kamata et al.
patent: 6207959 (2001-03-01), Satoh et al.
patent: 6437351 (2002-08-01), Smick et al.
patent: 6710358 (2004-03-01), Chen et al.
patent: 6946667 (2005-09-01), Chen et al.
patent: 6984833 (2006-01-01), Sano et al.
patent: 7019314 (2006-03-01), Benveniste et al.
patent: 7276712 (2007-10-01), Ferrara
patent: 7319505 (2008-01-01), Namba
patent: 2005/0230642 (2005-10-01), Halling et al.
patent: 2007/0001129 (2007-01-01), Ferrara
patent: 10-321175 (1998-12-01), None
patent: 2000-294187 (2000-10-01), None
patent: 2003-249189 (2003-09-01), None
patent: 10-2003-0074716 (2003-09-01), None

Affiliated with

Also associated with

Rating

Apparatus and method for partial ion implantation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus and method for partial ion implantation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for partial ion implantation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4121295