Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-09-11
2007-09-11
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21170
Reexamination Certificate
active
11052012
ABSTRACT:
Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into said vacuum chamber. A target-sputtering plasma is maintained at the target to produce a stream of principally neutral atoms flowing from the target toward the wafer for vapor deposition. A wafer-sputtering plasma is maintained near the wafer support pedestal to produce a stream of sputtering ions toward the wafer support pedestal for re-sputtering. The sputtering ions are accelerated across a plasma sheath at the wafer in a direction normal to a surface of the wafer to render the sputter etching highly selective for horizontal surfaces.
REFERENCES:
patent: 3461054 (1969-08-01), Vratney
patent: 3661758 (1972-05-01), Jackson et al.
patent: 4539068 (1985-09-01), Takagi et al.
patent: 4837185 (1989-06-01), Yau et al.
patent: 4963239 (1990-10-01), Shimamura et al.
patent: 4999096 (1991-03-01), Nihei et al.
patent: RE34106 (1992-10-01), Ohmi
patent: 5308793 (1994-05-01), Taguchi et al.
patent: 5486492 (1996-01-01), Yamamoto et al.
patent: 5507930 (1996-04-01), Yamashita et al.
patent: 5510011 (1996-04-01), Okamura et al.
patent: 5656123 (1997-08-01), Salimian et al.
patent: 5933753 (1999-08-01), Simon et al.
patent: 5933973 (1999-08-01), Fenley, Jr.
patent: 5976327 (1999-11-01), Tanaka
patent: 5986762 (1999-11-01), Challener
patent: 6051114 (2000-04-01), Yao et al.
patent: 6080285 (2000-06-01), Liu et al.
patent: 6197167 (2001-03-01), Tanaka
patent: 6216632 (2001-04-01), Wickramanayaka
patent: 6221221 (2001-04-01), Al-Shaikh et al.
patent: 6228236 (2001-05-01), Rosenstein et al.
patent: 6251242 (2001-06-01), Fu et al.
patent: 6274008 (2001-08-01), Gopalraja et al.
patent: 6277249 (2001-08-01), Gopalraja et al.
patent: 6287977 (2001-09-01), Hashim et al.
patent: 6309978 (2001-10-01), Donohoe et al.
patent: 6350353 (2002-02-01), Gopalraja et al.
patent: 6352620 (2002-03-01), Yu et al.
patent: 6377060 (2002-04-01), Burkhart et al.
patent: 6436251 (2002-08-01), Gopalraja et al.
patent: 6444104 (2002-09-01), Gopalraja et al.
patent: 6444137 (2002-09-01), Collins et al.
patent: 6451177 (2002-09-01), Gopalraja et al.
patent: 6485617 (2002-11-01), Fu et al.
patent: 6485618 (2002-11-01), Gopalraja et al.
patent: 6488807 (2002-12-01), Collins et al.
patent: 6498091 (2002-12-01), Chen et al.
patent: 6518195 (2003-02-01), Collins et al.
patent: 6545420 (2003-04-01), Collins et al.
patent: 6554979 (2003-04-01), Stimson
patent: 6559061 (2003-05-01), Hashim et al.
patent: 6652718 (2003-11-01), D'Couto et al.
patent: 6660622 (2003-12-01), Chen et al.
patent: 6709987 (2004-03-01), Hashim et al.
patent: 6755945 (2004-06-01), Yasar et al.
patent: 6787006 (2004-09-01), Gopalraja et al.
patent: 2001/0023822 (2001-09-01), Koizumi et al.
patent: 2001/0050220 (2001-12-01), Chiang et al.
patent: 2002/0004309 (2002-01-01), Collins et al.
patent: 2002/0104751 (2002-08-01), Drewery et al.
patent: 2003/0116427 (2003-06-01), Ding et al.
patent: 2004/0025791 (2004-02-01), Chen et al.
patent: 2004/0188239 (2004-09-01), Robison et al.
Wickramanayaka, S., et al., “Using I-PVD for copper-based interconnects,”Solid State Technology, Oct. 2002, pp. 67-74.
U.S. Appl. No. 10/693,775, filed Oct. 25, 2003 entitled Tantalum Barrier Layer For Copper Metallization by Ling Chen, et al.
U.S. Appl. No. 10/761,466, filed Jan. 21, 2004 entitled Method And Apparatus For Forming Improved Metal Interconnects by Imaran Hashim, et al.
U.S. Appl. No. 10/934,231, filed Sep. 3, 2004 entitled Multi-Step Magnetron Sputtering Process by Praburam Gopalraja, et al.
Boyle, P.C., et al., “Independent control of ion current and ion impact energy onto electrodes in dual frequency plasma devices”,Journal of Physics D: Applied Physics, 2004, pp. 697-701, vol. 37, Institute of Physics Publishing, United Kingdom.
Brown Karl M.
Mehta Vineet
Pipitone John
Applied Materials Inc.
Geyer Scott B.
Ullah Elias
Wallace Robert W.
LandOfFree
Apparatus and method for metal plasma vapor deposition and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method for metal plasma vapor deposition and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for metal plasma vapor deposition and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3750702