Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2006-03-07
2006-03-07
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S185110, C365S185330, C365S201000
Reexamination Certificate
active
07009896
ABSTRACT:
A method and an apparatus for managing bad blocks generated while a flash memory is being used. A method for managing a bad block in a flash memory includes (a) allocating a used area having a plurality of used blocks and a spare area having a plurality of spare blocks in the flash memory, and providing a block map page group including a plurality of block map pages in which mapping information to map a bad block generated in either of the used area or the spare block to a spare block, (b) having mapping information of the block map page reside among the block map page groups in the memory, and (c) mapping the bad block generated during a flash operation to an unused spare block found through the mapping information, updating the mapping information, and recording the updated mapping information on the block map page.
REFERENCES:
patent: 2004/0080998 (2004-04-01), Chang et al.
Chung Tae-sun
In Ji-hyun
Kim Bum-soo
Kim Jang-hwan
Yoon Song-ho
Luu Pho M.
Phung Anh
Samsung Electronics Co,. Ltd.
Sughrue & Mion, PLLC
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