Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1984-10-25
1987-05-26
Andrews, R. L.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
204298, 20419225, 20419237, 118723, 118728, 118 501, 156345, 156643, 156662, 427 38, 427 39, 427 47, 428698, 428702, C23C 1400
Patent
active
046683658
ABSTRACT:
A plasma CVD reactor and associated process use magnetic field enhancement to provide high quality, very high deposition rate metal, dielectric and conformal semiconductor films. The reacter and process are designed for automated, high-throughout, in-line small dimension VLSI integrated circuit fabrication, and are applicable to multistep in-situ processing.
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"Cylindrical Magnetron Sputtering", Thin Film Processes, Thornton et al., Chap. II--2, Academic Press, 1978, pp. 76-113.
IBM Tech. Disclosure Bulletin, "Method of Increasing the Deposition and Etch Ratesin Plasma Processes", by Hinkel et al., vol. 25, No. 7A, Dec. 1982, p. 3161.
Foster Robert
Maydan Dan
Somekh Sasson
Wang David N.
Andrews R. L.
Applied Materials Inc.
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