Apparatus and method for low pressure chemical vapor deposition

Details Apparatus and method for low pressure chemical vapor deposition Apparatus and method for low pressure chemical vapor deposition

1998-09-14

2000-03-14

Lund, Jeffrie R

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

438908, 438909, 438935, 4272481, 4272557, 29 2501, H01L 2100, C23C 1600

Patent

active

060372729

ABSTRACT:
An apparatus for low pressure chemical vapor deposition for fabricating a semiconductor device comprises a group of reaction chambers, a group of high-vacuum pumps connected to the reaction chambers, a group of gate valves connected to the high-vacuum pumps, and a low-vacuum pump connected to the gate valves. There are fewer gate valves than high-vacuum pumps. A method for fabricating a semiconductor device using the above apparatus includes the sequence and duration of opening gate valves, injecting reaction gases, and pumping with the low vacuum pump. According to the present invention, since the number of pumps is reduced, the cost for installation, operation and maintenance of the semiconductor device fabrication apparatus is reduced.

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