Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2005-06-14
2005-06-14
Wille, Douglas (Department: 2814)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S785000
Reexamination Certificate
active
06905979
ABSTRACT:
The invention relates to an apparatus and method for improving AC coupling between adjacent signal traces and between plane splits and signals spanning plane splits on circuit boards. A circuit board includes adjacent conductive means and an oxide means interposed there between. The oxide means is a copper oxide, e.g., cupric or cuprous oxide. In one embodiment, the adjacent conductive means are adjacent voltage reference planes with a split interposed between the conductive means. The copper oxide fills the split. In another embodiment, the adjacent conductive means are differential signal traces. The copper oxide fills a gap between the differential signal traces. The copper oxide is a non-conductive material with an increased dielectric constant as compared to other common dielectric materials used as fillers. The increased dielectric constant increases capacitance, in turn, increasing AC coupling.
REFERENCES:
patent: 3615951 (1971-10-01), Franco et al.
Jackson James D.
Roth Weston
Searls Damion T.
Intel Corporation
Marger & Johnson & McCollom, P.C.
Peralta Ginette
Wille Douglas
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