Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2005-08-26
2009-11-10
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S210140, C365S145000
Reexamination Certificate
active
07616514
ABSTRACT:
A reference voltage supply apparatus and a driving method thereof in a ferroelectric memory device provide a reference voltage stabilized against the imprint effect thus maintaining reading reliability of the device. In the reference voltage supply apparatus (e.g., using a non-switching capacitance of a ferroelectric capacitor), a reference cell is constructed of a ferroelectric capacitor and an access switch, and provides a reference voltage to read data from a memory cell. In an active mode, the reference cell stores data of a first logic state (e.g., corresponding to the non-switching capacitance of the ferroelectric capacitor), in the reference cell, and then supplies, as a reference voltage, the voltage corresponding to the data of the first logic state to a bit line; and in a stand-by mode, a reference voltage controller stores (writes) data of a second logic state (opposite to the first logic state), into the reference cell.
REFERENCES:
patent: 5844832 (1998-12-01), Kim
patent: 6574133 (2003-06-01), Takashima
patent: 2004/0100813 (2004-05-01), Ashikaga
patent: 09231776 (1997-09-01), None
Jeon Byung-Gil
Lee Han-Joo
Lee Kang-Woon
Min Byung Jun
F. Chau & Associates LLC
Hur J. H.
King Douglas
Samsung Electronics Co,. Ltd.
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