Apparatus and method for forming controlled deep trench top isol

Details Apparatus and method for forming controlled deep trench top isol Apparatus and method for forming controlled deep trench top isol

1998-07-31

2000-06-13

Smith, Matthew

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438391, 257301, H01L 218242

Patent

active

060749091

ABSTRACT:
A method for controlling isolation layer thickness in deep trenches for semiconductor memories in accordance with the present invention includes the steps of providing a deep trench having a storage node formed therein, the storage node having a buried strap, depositing an isolation layer on the buried strap for providing electrical isolation for the storage node, forming a masking layer on the isolation layer to mask a portion of the isolation layer in contact with the buried strap and removing the isolation layer except the portion masked by the mask layer such that control of a thickness of the isolation layer is improved. A method for fabricating vertical transistors by recessing a substrate to permit increased overlap between a transistor channel and buried strap outdiffusion when the transistor is formed is also included. A semiconductor device is also disclosed.

REFERENCES:
patent: 5482883 (1996-01-01), Rajeevakumar
patent: 5831301 (1998-11-01), Horak et al.

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