Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-18
1999-11-02
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257360, 257363, 257365, H01L 2362
Patent
active
059775955
ABSTRACT:
The present invention relates to an apparatus and method for protecting a semiconductor device, and more particularly to an n-type metal-oxide semiconductor (NMOS) transistor with a ladder structure, used for protecting a semiconductor device from electrostatic discharge. In the present invention, a plurality of drain branches are connected by resistors, and a contact point of the well and the source/well pattern is formed only alongside the drain branch of the ladder structure which is nearest an input/output terminal of the semiconductor device. Accordingly, the current is better dispersed to all of the drain branches, thereby preventing the voltage breakdown of the transistor due to heat caused by the localization of current in the drain branch farthest from the input/output terminal.
REFERENCES:
patent: H842 (1990-11-01), Ochs
Eckert II George C.
Martin-Wallace Valencia
Samsung Electronics Co,. Ltd.
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