Apparatus and method for electron beam inspection with...

Radiant energy – Inspection of solids or liquids by charged particles – Electron probe type

Reexamination Certificate

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C250S306000, C250S307000, C250S3960ML, C250S397000

Reexamination Certificate

active

07420167

ABSTRACT:
An apparatus and method for electron beam inspection with projection electron microscopy, is constructed so as to allow correction of changes in focus offsets due to changes in the electrically charged state particularly during inspection. The apparatus includes: a focus measure sensor unit; a focus measure calculation unit which calculates focus measure from the multiple image signals converted by the focus measure sensor unit; a focus position calculation unit which calculates the height of a confocal plane conjugate to the plane of convergence of a planar electron beam by an objective lens, on the basis of the calculated focus measure, and then calculates the focus position of the objective lens on the basis of the calculated height of the confocal plane; and a focus position correction unit which corrects the focus position of the objective lens according to the calculated focus position of the objective lens.

REFERENCES:
patent: 2007/0194229 (2007-08-01), Okuda et al.
patent: 2007/0272857 (2007-11-01), Hasegawa et al.
patent: 2003-202217 (2003-07-01), None
patent: 2004-363085 (2004-12-01), None
Hasegawa et al., Development of EB wafer Inspection Technique by Using Mirror Electron Projection, LSI Testing Symposium, pp. 89-93, 2004.
Murakami et al., Development of an Electron Beam Inspection System Based on Projection Imaging Microscopy, LSI Testing Symposium, pp. 85-87, 2004.
Nagahama et al., Inspection performance of the electron beam inspection system based on projection electron microscopy, pp. 921-928, SPIE vol. 5375, 2004.
Satake et al., Electron beam inspection system for semiconductor wafer, based on projection electron microscopy, pp. 1125-1134, SPIE vol. 5375, 2004.

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