Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2007-03-13
2007-03-13
Olsen, Allan (Department: 1763)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C216S024000, C216S060000, C216S073000, C216S079000, C438S008000, C438S016000, C438S706000
Reexamination Certificate
active
10269149
ABSTRACT:
Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the endpoint of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber.
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Li et al., “M
MacDonald Douglas B.
MacDonald Niles K.
Patel Satyadev R.
Schaadt Gregory P.
Shi Hongqin
Brady III W. James
Olsen Allan
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