Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-06-14
2005-06-14
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S643000, C438S627000, C438S653000, C438S656000, C438S685000
Reexamination Certificate
active
06905959
ABSTRACT:
A method of depositing thin films comprising tantalum, tantalum nitride, and copper for barrier films and seed layers within high aspect ratio openings used for copper interconnects. The barrier films and seed layers are deposited at extremely low temperature conditions wherein the wafer stage temperature of the sputter source is chilled to about −70° C. to about 0° C. Most preferably, the present invention is practiced using a hollow cathode magnetron. The resulting tantalum and/or tantalum nitride barrier films and copper seed layers are superior in surface smoothness, grain size and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.
REFERENCES:
patent: 4985750 (1991-01-01), Hoshino
patent: 5117276 (1992-05-01), Thomas et al.
patent: 5283453 (1994-02-01), Rajeevakumar
patent: 5374592 (1994-12-01), McNaughton et al.
patent: 5603988 (1997-02-01), Shapiro et al.
patent: 5668054 (1997-09-01), Sun et al.
patent: 5714418 (1998-02-01), Bai et al.
patent: 5900672 (1999-05-01), Chan et al.
patent: 5919531 (1999-07-01), Arkles et al.
patent: 5939788 (1999-08-01), McTeer
patent: 6037258 (2000-03-01), Liu et al.
patent: 6071809 (2000-06-01), Zhao
patent: 6080285 (2000-06-01), Liu et al.
patent: 6146986 (2000-11-01), Wagganer
patent: 6221758 (2001-04-01), Liu et al.
patent: 6255192 (2001-07-01), Dornisch
patent: 6294466 (2001-09-01), Chang
patent: 2000183160 (2000-06-01), None
Ashtiani Kaihan A.
Biberger Maximilian A.
Fai Lai Kwok
Klawuhn Erich R.
Levy Karl B.
DeLio & Peterson LLC
Fourson George
Maldonado Julio J.
Novellus Systems Inc.
LandOfFree
Apparatus and method for depositing superior Ta (N) copper... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method for depositing superior Ta (N) copper..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for depositing superior Ta (N) copper... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3487765