Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Patent
1998-02-19
2000-03-14
Lund, Jeffrie R
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
42725523, 42725511, 4272481, 118718, 118724, 118726, 118729, 392386, 392387, 438758, 438149, C23C 1600
Patent
active
060372419
ABSTRACT:
Apparatus (12, 12a) and a method for depositing a semiconductor material on a glass sheet substrate (G) utilizes a distributor (22) including a heated permeable member (24) through which a carrier gas and a semiconductor material are passed to provide a vapor that is deposited as a semiconductor layer on the conveyed glass sheet substrate. The permeable member (24) is tubular and has an electrical voltage applied along its length to provide the heating, and the carrier gas and the semiconductor as a powder are introduced into the tubular permeable member for flow outwardly therefrom as the vapor. A shroud (34) extending around the tubular permeable member (24) has an opening (36) through which the vapor flows for the semiconductor layer deposition. In one embodiment of apparatus (12), the semiconductor layer is deposited on an upwardly facing surface (56) of the glass sheet substrate (G) while another embodiment of the apparatus (12a) deposits the semiconductor layer on a downwardly facing surface (54) of the substrate.
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Cox Steven M.
Dorer Gary L.
Kahle Terence D.
McMaster Harold A.
Powell Ricky C.
First Solar LLC
Lund Jeffrie R
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