Radiant energy – Inspection of solids or liquids by charged particles – Positive ion probe or microscope type
Reexamination Certificate
2007-08-21
2007-08-21
Berman, Jack I. (Department: 2881)
Radiant energy
Inspection of solids or liquids by charged particles
Positive ion probe or microscope type
C250S252100, C250S491100, C250S492200, C250S492220, C216S066000, C204S192110, C430S005000, C360S131000
Reexamination Certificate
active
11484015
ABSTRACT:
A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.
REFERENCES:
patent: 3789185 (1974-01-01), Baldwin et al.
patent: 3798447 (1974-03-01), Lanusse et al.
patent: 3845305 (1974-10-01), Liebl
patent: 3900737 (1975-08-01), Collier et al.
patent: 4093891 (1978-06-01), Christie et al.
patent: 4132892 (1979-01-01), Wittmaack
patent: 4153843 (1979-05-01), Pease
patent: 4255661 (1981-03-01), Liebl
patent: 4327292 (1982-04-01), Wang et al.
patent: 4383180 (1983-05-01), Turner
patent: 4418283 (1983-11-01), Trotel
patent: 4430571 (1984-02-01), Smith et al.
patent: 4431923 (1984-02-01), Wang et al.
patent: 4433384 (1984-02-01), Berrian et al.
patent: 4445039 (1984-04-01), Yew
patent: 4467240 (1984-08-01), Futamoto et al.
patent: 4477729 (1984-10-01), Chang et al.
patent: 4494004 (1985-01-01), Mauer, IV et al.
patent: 4498010 (1985-02-01), Biechler et al.
patent: 4511980 (1985-04-01), Watanabe et al.
patent: 4525629 (1985-06-01), Morita et al.
patent: 4556794 (1985-12-01), Ward et al.
patent: 4556798 (1985-12-01), McKenna et al.
patent: 4563587 (1986-01-01), Ward et al.
patent: 4687940 (1987-08-01), Ward et al.
patent: 4698509 (1987-10-01), Wells et al.
patent: 4710632 (1987-12-01), Ishitani et al.
patent: 4716127 (1987-12-01), Shukuri et al.
patent: 4774414 (1988-09-01), Umemura et al.
patent: 4789787 (1988-12-01), Parker
patent: 4804837 (1989-02-01), Farley
patent: 4806921 (1989-02-01), Goodman et al.
patent: 4816692 (1989-03-01), Rudert
patent: 4818872 (1989-04-01), Parker
patent: 4818885 (1989-04-01), Davis et al.
patent: 4837447 (1989-06-01), Pierce et al.
patent: 4853870 (1989-08-01), Yasutake et al.
patent: 4874460 (1989-10-01), Nakagawa et al.
patent: 4879605 (1989-11-01), Warkentin et al.
patent: 4885472 (1989-12-01), Young
patent: 4893163 (1990-01-01), Rudeck
patent: 4908226 (1990-03-01), Kubena et al.
patent: 4929839 (1990-05-01), Parker et al.
patent: 4936968 (1990-06-01), Ohnishi et al.
patent: 4967380 (1990-10-01), Szajnowski et al.
patent: 5103101 (1992-04-01), Berlund et al.
patent: 5136171 (1992-08-01), Leung et al.
patent: 5155368 (1992-10-01), Edwards et al.
patent: 5187371 (1993-02-01), Matsui et al.
patent: 5223109 (1993-06-01), Itoh et al.
patent: 5241182 (1993-08-01), Martin et al.
patent: 5301124 (1994-04-01), Langner et al.
patent: 5329130 (1994-07-01), Kai et al.
patent: 5331172 (1994-07-01), Kumar et al.
patent: 5393987 (1995-02-01), Abboud et al.
patent: 5447614 (1995-09-01), Hamamura et al.
patent: 5598002 (1997-01-01), Todokoro et al.
patent: 5621216 (1997-04-01), Clarke et al.
patent: 5683595 (1997-11-01), Nagamachi
patent: 5827786 (1998-10-01), Puretz
patent: 5844416 (1998-12-01), Campbell et al.
patent: 6145438 (2000-11-01), Berglund et al.
patent: 6242751 (2001-06-01), Takemoto et al.
patent: 6274290 (2001-08-01), Veneklasen et al.
patent: 6410924 (2002-06-01), Wang
patent: 6492261 (2002-12-01), Gavish et al.
patent: 6583426 (2003-06-01), Kawanami et al.
patent: 6635890 (2003-10-01), Saadatmand et al.
patent: 6753538 (2004-06-01), Musil et al.
patent: 6759665 (2004-07-01), Benveniste et al.
patent: 6768120 (2004-07-01), Leung et al.
patent: 6888146 (2005-05-01), Leung et al.
patent: 6924493 (2005-08-01), Leung
patent: 6996450 (2006-02-01), Suttile et al.
patent: 6998217 (2006-02-01), Martyniuk et al.
patent: 7098614 (2006-08-01), Yamashita
patent: 7129502 (2006-10-01), Kruit
patent: 2002/0094694 (2002-07-01), Phillip et al.
patent: 2003/0168608 (2003-09-01), Ji et al.
patent: 2004/0020434 (2004-02-01), Gavish et al.
patent: 2004/0051053 (2004-03-01), Barletta et al.
patent: 2004/0146133 (2004-07-01), Leung
patent: 2005/0242299 (2005-11-01), Elmer et al.
patent: 2006/0008707 (2006-01-01), Watanabe et al.
E. Ada et al., “Ion beam modification and patterning of organosilane self-assembled monolayers,” J. Vac. Sci. Technol. B 13 (6), Nov./Dec. 1995, pp. 2189-2196.
R. Aihara et al., “Stabilization of an electrostatic lens for a focused ion beam system,” J. Vac. Sci. Technol. B 6 (3), May/Jun. 1988, pp. 958-961.
H. Arimoto et al., “Energy distributions of liquid metal alloy ion sources,” J. Vac. Sci. Technol. B 6 (3), May/Jun. 1988, pp. 919-922.
A. Bell et al., “A low-current liquid metal ion source,” J. Vac. Sci. Technol. B 6 (3), May/Jun. 1988, pp. 927-930.
G. Brewer et, al.,Electron-Beam Technology in Microelectronic Fabrication, Academic Press, 1980.
B. Carlsten, “Klystron Beam-Bunching Lecture,” 1996 US/CERN/JAPAN Accelerator school, Conf- 9609245-1, Los Alamos National Lab, New Mexico.
A. Chalupka et al., “Novel electrostatic column for ion projection lithography,” J. Vac. Sci. Technol. B 12 (6), Nov./Dec. 1994, pp. 3513-3517.
L. Chao et al., “Spherical aberration corrector using space charge,” J. Vac. Sci. Technol. B 15 (6), Nov./Dec. 1997, pp. 2732-2736.
E. Chason et al., “Ion beams in silicon processing and characterization,” J. Appl. Phys. 81(10), May 15, 1997, pp. 6513-6560.
C. Chen et al., “Study of H-beams for ion-projection lithography,” J. Vac. Sci. Technol. B 13 (6), Nov./Dec. 1995, pp. 2597-2599.
J. Corelli et al., “Summary Abstract: Liquid metal ion sources and applications in focused ion beams systems,” J. Vac. Sci. Technol. B 6 (3), May/Jun. 1988, p. 936.
M. Current, “Current Status of Ion Implantation and Techniques for Manufacturing Semiconductor IC Fabrication,” Nuclear Instruments and Methods in Physics Research B6 (1985), pp. 9-15.
V. Dai, “Binary Lossless Layout Compression Algorithms and Architectures for Direct-Write Lithography Systems,” Masters of Science, Plan II, UC Berkeley.
D. Dahl et al., “A modular ion beam deflector,” International Journal of Mass Spectrometry 189 (1999), pp. 47-51.
A. Della Ratta et al., “Focused-ion beam induced deposition of copper,” J. Vac. Sci. Technol. B (11) 6, Nov./Dec. 1993, pp. 2195-2199.
A. De Marco et al., “Maskless fabrication of JFETs via focused ion beams,” Solid-State Electronics 48 (2004), pp. 1833-1836.
A. De Marco et al., “Maskless Fabrication of Junction Field Effect Transistors Via Focused Ion Beams,” Ph.D. Dissertation, University of Maryland, 2004.
M. Dennen et al., “50 KeV e-beam resist characterization for the 100nm lithography node and below,” available at www:spie.org/Conferences/programs/01/pm/Conferences.html, 2001.
K. Edinger et al., “Study of precursor gases for focused ion beam insulator deposition,” J. Vac. Sci. Technol. B 16 (6), Nov./Dec. 1998, pp. 3311-3314.
K. Edinger et al., “Modeling of focused ion beam induced surface chemistry,” J. Vac. Sci. Technol. B 18 (6), Nov./Dec. 2000, pp. 3190-3193.
J. Freyer et al., “Enhanced Pattern Accuracy with MEBES III,” SPIE vol. 471 Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithogrphies III (1984), pp. 8-17.
J. Freyer et al, “Design of an Accurate Production E-Beam System,” Solid State Technology, Sep. 1983, pp. 165-170.
K. Gamo, “Recent advances of focused ion beam technology,” Nuclear Instruments and Methods in Physics Research B 121 (1997), pp. 464-469.
A. Geraci et al., “High-order maps with acceleration for optimization of electrostatic and radio-frequency ion-optical elements,” Review of Scientific Instruments, vol. 73, No. 9, Sep. 2002, pp.
Bennahmias Mark Joseph
Mayse Mark Anthony
Scott Jeffrey Winfield
Zani Michael John
Berman Jack I.
Hashmi Zia R.
Knobbe Martens Olson & Bear LLP
NexGenSemi Holdings Corporation
LandOfFree
Apparatus and method for controlled particle beam manufacturing does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method for controlled particle beam manufacturing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for controlled particle beam manufacturing will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3861806