Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging
Reexamination Certificate
2011-08-09
2011-08-09
Young, Christopher G (Department: 1721)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Electron beam imaging
C430S942000, C438S712000
Reexamination Certificate
active
07993813
ABSTRACT:
A manufacturing process technology creates a pattern on a first layer using a focused ion beam process. The pattern is transferred to a second layer, which may act as a traditional etch stop layer. The pattern can be formed on the second layer without irradiation by light through a reticle and without wet chemical developing, thereby enabling conformal coverage and very fine critical feature control. Both dark field patterns and light field patterns are disclosed, which may enable reduced or minimal exposure by the focused ion beam.
REFERENCES:
patent: 3789185 (1974-01-01), Baldwin et al.
patent: 3798447 (1974-03-01), Lanusse et al.
patent: 3845305 (1974-10-01), Liebl
patent: 3900737 (1975-08-01), Collier et al.
patent: 4093891 (1978-06-01), Christie et al.
patent: 4132892 (1979-01-01), Wittmaack
patent: 4153843 (1979-05-01), Pease
patent: 4255661 (1981-03-01), Liebl
patent: 4323638 (1982-04-01), Adams et al.
patent: 4327292 (1982-04-01), Wang et al.
patent: 4383180 (1983-05-01), Turner
patent: 4418283 (1983-11-01), Trotel
patent: 4430571 (1984-02-01), Smith et al.
patent: 4431923 (1984-02-01), Wang et al.
patent: 4433384 (1984-02-01), Berrian et al.
patent: 4445039 (1984-04-01), Yew
patent: 4467240 (1984-08-01), Futamoto et al.
patent: 4477729 (1984-10-01), Chang et al.
patent: 4494004 (1985-01-01), Mauer, IV et al.
patent: 4498010 (1985-02-01), Biechler et al.
patent: 4511980 (1985-04-01), Watanabe et al.
patent: 4525629 (1985-06-01), Morita et al.
patent: 4556794 (1985-12-01), Ward et al.
patent: 4556798 (1985-12-01), McKenna et al.
patent: 4563587 (1986-01-01), Ward et al.
patent: 4687940 (1987-08-01), Ward et al.
patent: 4698509 (1987-10-01), Wells et al.
patent: 4710632 (1987-12-01), Ishitani et al.
patent: 4716127 (1987-12-01), Shukuri et al.
patent: 4757208 (1988-07-01), McKenna et al.
patent: 4774414 (1988-09-01), Umemura et al.
patent: 4789787 (1988-12-01), Parker
patent: 4804837 (1989-02-01), Farley
patent: 4806921 (1989-02-01), Goodman et al.
patent: 4816692 (1989-03-01), Rudert, Jr.
patent: 4818872 (1989-04-01), Parker et al.
patent: 4818885 (1989-04-01), Davis et al.
patent: 4837447 (1989-06-01), Pierce et al.
patent: 4853870 (1989-08-01), Yasutake et al.
patent: 4874460 (1989-10-01), Nakagawa et al.
patent: 4879605 (1989-11-01), Warkentin et al.
patent: 4885472 (1989-12-01), Young
patent: 4893163 (1990-01-01), Rudeck
patent: 4908226 (1990-03-01), Kubena et al.
patent: 4929839 (1990-05-01), Parker et al.
patent: 4936968 (1990-06-01), Ohnishi et al.
patent: 4967380 (1990-10-01), Szajnowski
patent: 5103101 (1992-04-01), Bergund et al.
patent: 5136171 (1992-08-01), Leung et al.
patent: 5155368 (1992-10-01), Edwards et al.
patent: 5187371 (1993-02-01), Matsui et al.
patent: 5223109 (1993-06-01), Itoh et al.
patent: 5241182 (1993-08-01), Martin et al.
patent: 5301124 (1994-04-01), Chan et al.
patent: 5306601 (1994-04-01), Hashimoto et al.
patent: 5329130 (1994-07-01), Kai et al.
patent: 5331172 (1994-07-01), Kumar et al.
patent: 5393987 (1995-02-01), Abboud et al.
patent: 5447614 (1995-09-01), Hamamura et al.
patent: 5482802 (1996-01-01), Celler et al.
patent: 5580419 (1996-12-01), Berenz
patent: 5598002 (1997-01-01), Todokoro et al.
patent: 5621216 (1997-04-01), Clarke et al.
patent: 5683595 (1997-11-01), Nagamachi
patent: 5827786 (1998-10-01), Puretz
patent: 5834786 (1998-11-01), White et al.
patent: 5844416 (1998-12-01), Campbell et al.
patent: 5892231 (1999-04-01), Baylor et al.
patent: 6137112 (2000-10-01), McIntyre et al.
patent: 6145438 (2000-11-01), Berglund et al.
patent: 6242751 (2001-06-01), Takemoto et al.
patent: 6274290 (2001-08-01), Veneklasen et al.
patent: 6410924 (2002-06-01), Wang
patent: 6423976 (2002-07-01), Hilton et al.
patent: 6492261 (2002-12-01), Gavish et al.
patent: 6573014 (2003-06-01), Yamaguchi et al.
patent: 6583426 (2003-06-01), Kawanami et al.
patent: 6605816 (2003-08-01), Sandstrom
patent: 6635890 (2003-10-01), Saadatmand et al.
patent: 6753538 (2004-06-01), Musil et al.
patent: 6678125 (2004-07-01), Platzgummer et al.
patent: 6759665 (2004-07-01), Benveniste et al.
patent: 6768120 (2004-07-01), Leung et al.
patent: 6825101 (2004-11-01), Hawryluk et al.
patent: 6835289 (2004-12-01), Yamashita
patent: 6888146 (2005-05-01), Leung et al.
patent: 6924493 (2005-08-01), Leung
patent: 6996450 (2006-02-01), Suttile et al.
patent: 6998217 (2006-02-01), Martyniuk et al.
patent: 7098614 (2006-08-01), Yamashita
patent: 7129502 (2006-10-01), Kruit
patent: 7202488 (2007-04-01), Ota et al.
patent: 7259373 (2007-08-01), Zani et al.
patent: 2002/0094694 (2002-07-01), Russell et al.
patent: 2003/0038254 (2003-02-01), Kourosh et al.
patent: 2003/0168608 (2003-09-01), Ji et al.
patent: 2004/0020434 (2004-02-01), Gavish et al.
patent: 2004/0051053 (2004-03-01), Barletta et al.
patent: 2004/0146133 (2004-07-01), Leung et al.
patent: 2004/0150068 (2004-08-01), Leedy
patent: 2004/0178170 (2004-09-01), Morimoto
patent: 2005/0242299 (2005-11-01), Elmer et al.
patent: 2006/0008707 (2006-01-01), Watanabe et al.
patent: 2006/0163498 (2006-07-01), Yoneda et al.
patent: 2007/0278419 (2007-12-01), Zani et al.
International Search Report for PCT Application No. PCT/US 07/85447, mailed Oct. 20, 2008.
E. Ada et al., “Ion beam modification and patterning of organosilane self-assembled monolayers,” J. Vac. Sci. Technol. B 13 (6), Nov./Dec. 1995, pp. 2189-2196.
R. Aihara et al., “Stabilization of an electrostatic lens for a focused ion beam system,” J. Vac. Sci. Technol. B 6 (3), May/Jun. 1988, pp. 958-961.
H. Arimoto et al., “Energy distributions of liquid metal alloy ion sources,” J. Vac. Sci. Technol. B 6 (3), May/Jun. 1988, pp. 919-922.
A. Bell et al., “A low-current liquid metal ion source,” J. Vac. Sci. Technol. B 6 (3), May/Jun. 1988, pp. 927-930.
G. Brewer et. al.,Electron—Beam Technology in Microelectronic Fabrication, Academic Press, 1980.
B. Carlsten, “Klystron Beam-Bunching Lecture,” 1996 US/CERN/JAPAN Accelerator School, Conf9609245-1, Los Alamos National Lab, New Mexico.
A. Chalupka et al., “Novel electrostatic column for ion projection lithography,” J. Vac. Sci. Technol. B 12 (6), Nov./Dec. 1994, pp. 3513-3517.
L. Chao et al., “Spherical aberration corrector using space charge,” J. Vac. Sci. Technol. B 15 (6), Nov./Dec. 1997, pp. 2732-2736.
E. Chason et al., “Ion beams in silicon processing and characterization,” J. Appl. Phys. 81(10), May 15, 1997, pp. 6513-6560.
C. Chen et al., “Study of H—beams for ion-projection lithography,” J. Vac. Sci. Technol. B 13 (6), Nov./Dec. 1995, pp. 2597-2599.
J. Corelli et al., “Summary Abstract: Liquid metal ion sources and applications in focused ion beams systems,” J. Vac. Sci. Technol. B 6 (3), May/Jun. 1988, p. 936.
M. Current, “Current Status of Ion Implantation and Techniques for Manufacturing Semiconductor IC Fabrication,” Nuclear Instruments and Methods in Physics Research B6 (1985), pp. 9-15.
V. Dai, “Binary Lossless Layout Compression Algorithms and Architectures for Direct-Write Lithography Systems,” Masters of Science, Plan II, UC Berkeley (2000).
D. Dahl et al., “A modular ion beam deflector,” International Journal of Mass Spectrometry 189 (1999), pp. 47-51.
A. Della Ratta et al., “Focused-ion beam induced deposition of copper,” J. Vac. Sci. Technol. B (11) 6, Nov./Dec. 1993, pp. 2195-2199.
A. De Marco et al., “Maskless fabrication of JFETs via focused ion beams,” Solid-State Electronics 48 (2004), pp. 1833-1836.
A. De Marco et al., “Maskless Fabrication of Junction Field Effect Transistors Via Focused Ion Beams,” Ph.D. Dissertation, University of Maryland, 2004.
M. Dennen et al., “50 KeV e-beam resist characterization for the 100nm lithography node and below,” available at www.spie.org/Conferences/programs/01/pm/Conferences.html, 2001.
K. Edinger et al., “Study of precursor gases for focused ion beam insulator deposition,” J. Vac. Sci. Technol. B
Bennahmias Mark
Mayse Mark
Scott Jeffrey
Zani Michael
Knobbe Martens Olson & Bear LLP
NexGen Semi Holding, Inc.
Young Christopher G
LandOfFree
Apparatus and method for conformal mask manufacturing does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method for conformal mask manufacturing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for conformal mask manufacturing will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2680863