Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2010-02-12
2011-10-04
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C250S492200, C250S492300, C250S398000, C430S296000
Reexamination Certificate
active
08030626
ABSTRACT:
An average write speed M is calculated by averaging write speeds for blocks of a tentative block size La, and write speed variation σ of the blocks with respect to the average write speed M is calculated (Step S12). A maximum speed Vmax is calculated by accelerating and then decelerating (or decelerating and then accelerating) a stage when moving the stage by the width of one of the blocks of the tentative block size La (Step S13). When the relationship “Vmax−M≧σ” does not hold, the tentative block size La is increased (Step S15). When the relationship “Vmax−M≧σ” holds, the tentative block size La is set as an optimal block size Lb (Step S16).
REFERENCES:
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patent: 7863586 (2011-01-01), Abe
patent: 2008/0265174 (2008-10-01), Hiramoto et al.
patent: 2008/0299490 (2008-12-01), Takekoshi
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NuFlare Technology, Inc.
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Wells Nikita
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