Apparatus and method for allowing a synamic logic gate to operat

Electronic digital logic circuitry – Signal sensitivity or transmission integrity – Signal level or switching threshold stabilization

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326 21, 326 98, H03K 19003

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055504876

ABSTRACT:
A statically operated dynamic CMOS logic gate that includes an FET logic network for performing a predefined logic function with respect to its logic inputs, an output node, a precharge transistor, and in some embodiments an evaluate transistor. During operation, the precharge transistor is first turned on by a clock signal during a precharge phase to precharge an output node of the dynamic logic gate to a first voltage state. During the precharge phase, the evaluate transistor is turned off by the clock signal. An evaluate phase typically follows the precharge phase, and during the evaluation phase, the evaluate transistor is turned on by the control signal to allow the logic network to perform the predefined logic function with respect to its inputs, and the logic network selectively charges or discharges the output node to a second voltage state via the evaluate transistor in accordance with the predefined logic function given to the logic inputs to the logic gate. A driver circuit is provided for applying a bias voltage to the gate of the precharge transistor when the precharge transistor is not precharging the output node (e.g. the evaluate phase). The bias voltage has a voltage level that differs from the first voltage state by less than the magnitude of the threshold voltage of the precharge transistor in order for the precharge transistor to operate in a subthreshold conduction region so as to ensure the logic gate's output node to be at the first voltage state when the logic network does not discharge the output node to the second voltage state through the evaluate transistor as a result of the predetermined logic function. In this way, the dynamic logic gate circuit can operate statically with substantially minimized power consumption.

REFERENCES:
patent: 5051620 (1991-09-01), Burgin
patent: 5440243 (1995-08-01), Lyon
Charles M. Lee and Ellen W. Szeto, "Zipper CMOS," 1986, pp. 10-16.
Hery Fuchs, "1985 Chapel Hill Conference on Very Large Scale Integration", (Computer Science Press), pp. 88-94.
Jiren Yan and Christopher Sevensson, "High-Speed CMOS Circuit Technique," vol. 24, No. 1, Feb. 1989, pp. 62-70.
Marco Annaratone, "Digital CMOS Circuit Design," Kluwer Academic Publishers, pp. 103-124, Boston, 1986.
Fabricus, Eugene D., "Introduction to VLSI Design," pp. 196-218, McGraw-Hill, New York, 1990.
Mukherjee, Amar, "Introduction to NMOS and CMOS VLSI Systems Design," pp. 96-107, Prentice-Hall, Englewood Cliffs, NJ, 1986.
Uyemura, John P., "Fundamentals of MOS Digital Integrated Circuits," pp. 541-577, Addison-Wesley, Reading, MA, 1988.
Wang, Niantsu, "Digital MOS Integrated Circuits," pp. 304-314, 330-333, Prentice-Hall, Englewood Cliff, NJ, 1989.
Weste, N. and Eshraghian, K. "Principles of CMOS VLSI Design: A Systems Perspective," pp. 162-175, 320-325, 331-332, 371-380, Addision-Wesley, Reading, MA, 1985.
Patent Abstract of Japan, Saiki Yozo "Semiconductor Integrated Circuit Device," vol. 15, No. 323 (E-1101), Aug. 16, 1991.
Patent Abstract of Japan, Saiki Yozo "Dynamic Logical Gate, " vol. 16, No. 134 (E-1185), Apr. 6, 1992.
Prctorius et al., "Charge Redistribution and Noise Margins in Domino CMOS Logic," IEEE TCAS, vol. CAS-33, No. 8, pp. 786-793, Aug. 1986.
Geiger, Randall L. Allen, Phillip E. and Stader, Noel R., "VLSI Design Techniques for Analog and Digital Circuits," pp. 815-821, McGraw-Hill, New York, 1990.
Glasser, Lance A. and Dobberpuhl, Daniel W., "The Design and Analysis of VLSI Circuits," pp. 331-343, 375-385, Addison-Wesley, Reading, MA, 1985.
Hodges, David A. and Jackson, Horace G., "Analysis and Design of Digital Integrated Circuits 2nd edition," pp. 98-102, 340-345, 398-407, 312-316, 399-404, McGraw-Hill, New York.
Lyon, Richard, F. and Schediwy, Richard R., "CMOS Static Memory with a New Four-Transistor Memory Cell," in Advanced Research in VLSI Proceedings of the 1987 Stanford Conference (P. Losleben, ed.), MIT Press. 1987.
Mavor, J., Jack, M. A. and Denyer, P. B., "MOS LSI Design," pp. 100-105, Addison Wesley Publishers Ltd., London, 1983.

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