Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate
Reexamination Certificate
2005-11-08
2005-11-08
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having junction gate
C438S196000, C438S587000
Reexamination Certificate
active
06962839
ABSTRACT:
The present invention generally relates to an apparatus and method of carbon nanotube (CNT) gate field effect transistor (FET), which is used to replace the current metal gate of transistor for decreasing the gate width greatly. The carbon nanotube has its own intrinsic characters of metal and semiconductor, so it can be the channel, connector or next-level gate of transistor. Furthermore, the transistor has the structure of exchangeable source and drain, and can be defined the specificity by outside wiring.
REFERENCES:
patent: 5965911 (1999-10-01), Joo et al.
patent: 6545396 (2003-04-01), Ohki et al.
patent: 6705910 (2004-03-01), Sheu et al.
patent: 6740910 (2004-05-01), Roesner et al.
patent: 6780663 (2004-08-01), Park et al.
patent: 6835613 (2004-12-01), Schlaf
patent: 6852582 (2005-02-01), Wei et al.
Chen Hsin-Hui
Kao Ming-Jer
Lai Ming-Jiunn
Wang Hung-Hsiang
Wei Jeng-Hua
Bacon & Thomas PLLC
Industrial Technology Research Institute
Lebentritt Michael
Lindsay Jr. Walter L.
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