Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-08-16
2005-08-16
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S769000, C438S952000
Reexamination Certificate
active
06930028
ABSTRACT:
The present invention provides integrated circuit fabrication with a silicon oxynitride antireflective layer for gate location plus patterned photoresist linewidth reduction for gate length definition followed by interconnect definition without patterned photoresist linewidth reduction. This has the advantages of an antireflective layer compatible with linewidth reduction and polysilicon etching.
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Hanratty Maureen A.
He Qizhi
Lee Wei William
Rogers Daty M.
Brady W. James
Coleman W. David
Hoel Carlton H.
Nguyen Khiem
Telecky, jr. Frederick J.
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