Antireflective hardmask and uses thereof

Details Antireflective hardmask and uses thereof Antireflective hardmask and uses thereof

2007-02-06

2007-02-06

Lee, Sin (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S280100, C430S286100, C430S287100, C430S272100, C430S271100, C430S311000, C430S905000, C430S914000

Reexamination Certificate

active

10646307

ABSTRACT:
Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component.

REFERENCES:
patent: 6440642 (2002-08-01), Shelnut et al.
patent: 2003/0017635 (2003-01-01), Apen et al.

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