Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-12-04
2000-12-26
Elms, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438639, 438700, H01L 218238
Patent
active
061658553
ABSTRACT:
An anti-reflective coating for use in microcircuit fabrication and specifically using ultraviolet photolithographic processes. A three layered anti-reflective coating is used to enhance metallization etching in the construction of microcircuits. The coating features a titanium nitride anti-reflective layer sandwiched between two titanium metal layers. The upper titanium layer protects subsequently applied deep ultraviolet photoresists from the deleterious effects of the titanium nitride anti-reflective layer. The unique character of the three layer anti-reflective coating allows the use of an efficient single chamber fabrication process to form the three layer coating.
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Besser Paul R.
Chen Susan H.
Erb Darrell M.
Morales Carmen
Singh Bhanwar
Advanced Micro Devices , Inc.
Elms Richard
Luu Pho
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