Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
2006-02-23
2010-02-02
Lee, Sin J. (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S311000, C430S325000, C430S326000, C430S271100, C430S272100
Reexamination Certificate
active
07655377
ABSTRACT:
An antireflection film wherein, even where exposure light enters obliquely in a liquid immersion lithography technique, a sufficiently reduced reflectance can be achieved at the interface between a resist layer and a silicon substrate. A two-layer antireflection film is used in exposure by an exposure system having a wavelength of 190 to 195 nm and a numerical aperture of 1.0 or less and formed between the resist layer and the silicon substrate. Where complex refractive indices N1and N2and film thicknesses of upper and lower layers of the antireflection film are represented by n1-k1i, n2-k2i and d1, d2, respectively, and a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2and d2satisfy {(n1-n10)/(n1m-n10)}2+{(k1-k10)/(k1m-k10)}2+{(d1-d10)/(d1m-d10)}2+{(n2-n20)/(n2m-n20)}2+{(k2-k20)/(k2m-k20)}2+{(d2-d20)/(d2m-d20)}2≦1.
REFERENCES:
patent: 2007/0097514 (2007-05-01), Matsuzawa et al.
patent: 2001-242630 (2001-09-01), None
B. Thunnakart, K. Ozawa and A. Someya; The anti-reflective layers for hyper NA ArF lithography; a Collection of Lecture Drafts for the 65th Scientific Lecture Meeting of the Japan Society of Applied Physics, 2p-R-9, (2004).
Matsuzawa Nobuyuki
Ozawa Ken
Thunnakart Boontarika
Watanabe Yoko
Yamaguchi Yuko
Lee Sin J.
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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