Static information storage and retrieval – Read/write circuit – Having fuse element
Reexamination Certificate
2005-08-30
2005-08-30
Lebentritt, Michael S. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having fuse element
C365S200000
Reexamination Certificate
active
06937536
ABSTRACT:
A fuse option for a dynamic random access memory (DRAM) is provided to selectively slow row address signals when redundant rows of memory cells have been selected for use. The fuse option is blown when a redundant row is used to replace a defective row as identified during manufacture of a DRAM. The fuse is coupled to delay circuitry which has a known delay. When the fuse is blown after detecting a defective row, the delay circuitry is coupled in series with selected portions of a row address strobe (RAS) chain of circuitry used to propagate row address selection signals to the proper rows. This provides extra time needed for row address compare and override circuitry, which is not in series with the delay circuitry.
REFERENCES:
patent: 4687951 (1987-08-01), McElroy
patent: 4723227 (1988-02-01), Murotani
patent: 5274591 (1993-12-01), Waller et al.
patent: 5281868 (1994-01-01), Morgan
patent: 5329237 (1994-07-01), Horch
patent: 5528539 (1996-06-01), Ong et al.
patent: 5652721 (1997-07-01), McIntyre
patent: 5680544 (1997-10-01), Edmondson et al.
patent: 5801995 (1998-09-01), Masumoto
patent: 5845315 (1998-12-01), Cutter
patent: 6317370 (2001-11-01), Shirley
patent: 6643206 (2003-11-01), Shirley
Hur J. H.
Lebentritt Michael S.
LandOfFree
Antifuse option for row repair does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Antifuse option for row repair, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Antifuse option for row repair will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3485845