Antiferromagnetically coupled bi-layer sensor for magnetic...

Details Antiferromagnetically coupled bi-layer sensor for magnetic... Antiferromagnetically coupled bi-layer sensor for magnetic...

2005-03-29

2005-03-29

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06873542

ABSTRACT:
A magnetic tunnel junction (MTJ) memory array having a magnetically stable free layer that can be switched from one memory state to another with a minimum of energy input. The memory array includes a MTJ cell having an antiparallel coupled free layer. An electrically conductive word line passes through the free layer such that current passed through the electrically conductive word line induces a magnetic field that acts on antiparallel coupled layers of the free layer causing their magnetizations to rotate while remaining antiparallel to one another.

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U.S. Appl. No. 10/154,796, filed May 24, 2002.
U.S. Appl. No. 09/972,286, filed Oct. 5, 2001.

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