Anti-reflective interpoly dielectric

Details Anti-reflective interpoly dielectric Anti-reflective interpoly dielectric

2011-06-21

2011-06-21

Chen, Jack (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S320000, C257SE23001

Reexamination Certificate

active

07964905

ABSTRACT:
The invention provides core stacks for flash memory with an anti-reflective interpoly dielectric. Instead of requiring an anti-reflective coating at the top of the a stack, the present invention uses the interpoly layer as an anti-reflective coating in conjunction with a transmissive second polymer layer. Light is transmitted through the transmissive second polymer layer to the anti-reflective interpoly dielectric layer. The transmissive second polymer layer is formed from an amorphous silicon or polysilicon. Silicon oxynitride (SiON), as formed in the present invention, having a good dielectric constant K, is tailored in its index of refraction and in its thickness for utilization as both a good interpoly material and an anti-reflective coating.

REFERENCES:
patent: 5780891 (1998-07-01), Kauffman et al.
patent: 5888870 (1999-03-01), Gardner et al.

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