Annular gate and technique for fabricating an annular gate

Details Annular gate and technique for fabricating an annular gate Annular gate and technique for fabricating an annular gate

2005-01-11

2005-01-11

Abraham, Fetsum (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S268000, C438S238000, C438S239000, C438S386000, C438S399000

Reexamination Certificate

active

06841438

ABSTRACT:
A memory structure having a vertically oriented access transistor with an annular gate region and a method for fabricating the structure. More specifically, a transistor is fabricated such that the channel of the transistor extends outward with respect to the surface of the substrate. An annular gate is fabricated around the vertical channel such that it partially or completely surrounds the channel. A buried annular bitline may also be implemented. After the vertically oriented transistor is fabricated with the annular gate, a storage device may be fabricated over the transistor to provide a memory cell.

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patent: 6399979 (2002-06-01), Noble et al.
patent: 6486027 (2002-11-01), Noble et al.

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