Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-08-29
2000-06-06
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438305, 438643, H01L 21336
Patent
active
06071784&
ABSTRACT:
This invention includes a semiconductor device having a gate formed on a semiconductor substrate with a low hydrogen content etch stop or barrier layer formed over the gate, and methods for manufacturing a semiconductor device with an etch stop or barrier layer with low free hydrogen content. The semiconductor device may have a hydrogen getter layer formed between the gate and the etch stop or barrier layer. The etch stop or barrier layer is a high temperature PECVD nitride film, a high temperature PECVD oxynitride film or a high temperature LPCVD nitride film. The hydrogen getter layer is P-doped film having a thickness between about 500 .ANG. and about 2000 .ANG. and is a PSG, BPSG, PTEOS deposited oxide film, or a BPTEOS deposited oxide film. The low free hydrogen content of the etch stop layer or barrier layer is achieved by a high temperature annealing step, performed at a higher temperature than the deposition temperature of the etch stop or barrier layer. Specific uses of the etch stop or barrier layers include manufacture of electrical contacts and local interconnects.
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Barsan Radu
Mehta Sunil D.
Advanced Micro Devices , Inc.
Hack Jonathan
Niebling John F.
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