Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-02
2011-08-02
Wojciechowicz, Edward (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S142000, C438S197000, C438S704000, C438S775000, C438S780000
Reexamination Certificate
active
07989291
ABSTRACT:
A protruding structure having a linear edge is formed on a substrate. The protruding structure may be a gate line of a field effect transistor. A stress-generating liner is deposited on the substrate. A non-photosensitive self-assembling block copolymer layer containing at least two immiscible polymeric block components is deposited on the stress-generating liner, and is annealed to allow phase separation of immiscible components. The polymeric resist is developed to remove at least one of the at least two polymeric block components, which formed a pattern of nested lines due to the linear edge of the protruding structure. Linear nanoscale stripes are formed in the polymeric resist which is self-aligning and self-assembled. The stress-generating layer is patterned into linear stress-generating stripes having a sublithographic width. The linear stress-generating stripes provide a predominantly uniaxial stress along their lengthwise direction, providing an anisotropic stress to an underlying semiconductor device.
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PCT/US09/31043 Notice of Transmittal of the International Search Report and the Written Opinion Dated Mar. 11, 2009.
Clevenger Lawrence A.
Doris Bruce B.
Huang Elbert E.
Purushothaman Sampath
Radens Carl J.
Brown, Esq. Katherine S.
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Wojciechowicz Edward
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