Anisotropic etch method

Details Anisotropic etch method Anisotropic etch method

1990-08-27

1992-12-08

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156656, 156657, H01L 21306

Patent

active

051694875

ABSTRACT:
A method to anisotropically etch an oxide/silicide/poly sandwich structure on a silicon wafer substrate in situ, that is, using a single parallel plate plasma reactor chamber and a single inert cathode, with a variable gap between cathode and anode. This method has an oxide etch step and a silicide/poly etch step, both of which are performed as plasma etch steps. The process allows a continuous etch to be applied without removing the wafer from the plasma reactor chamber. The fully etched sandwich structure has a vertical profile at or near 90.degree. from horizontal, with no bowing or notching.

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One--Chamber Polycide Sandwich Etching, Rod C. Langley et al., pp. 95-97, Semiconductor International Oct. 1989.

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