Anisotropic chemical etching process of silicon oxide in the man

Details Anisotropic chemical etching process of silicon oxide in the man Anisotropic chemical etching process of silicon oxide in the man

1998-07-14

2000-08-29

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 21336

Patent

active

061107816

ABSTRACT:
This invention relates to an improvement to an anisotropic chemical etching process for silicon oxide and to a manufacturing process for silicon FAMOS transistor Flash EPROM memory devices including said improvement, said silicon oxide chemical etching process having an etching direction and being characterised in that the following steps are performed:

REFERENCES:
patent: 5766992 (1997-04-01), Chou et al.
patent: 5897360 (1997-10-01), Kawaguchi

Affiliated with

Also associated with

Rating

Anisotropic chemical etching process of silicon oxide in the man does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Anisotropic chemical etching process of silicon oxide in the man, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anisotropic chemical etching process of silicon oxide in the man will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1249167