Anisotropic and selective nitride etch process for high aspect r

Details Anisotropic and selective nitride etch process for high aspect r Anisotropic and selective nitride etch process for high aspect r

1997-08-15

2000-04-18

Nelms, David

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438724, 438744, 438749, H01L 21302

Patent

active

06051504&

ABSTRACT:
A process for etching silicon nitride from a multilayer structure which uses an etchant gas including a fluorocarbon gas, a hydrogen source, and a weak oxidant. A power source, such as an RF power source, is applied to the structure to control the directionality of the high density plasma formed by exciting the etchant gas. The power source that controls the directionality of the plasma is decoupled from the power source used to excite the etchant gas. The fluorocarbon gas is selected from CF.sub.4, C.sub.2 F.sub.6, and C.sub.3 F.sub.8 ; the hydrogen source is selected from CH.sub.2 F.sub.2, CH.sub.3 F, and H.sub.2 ; and the weak oxidant is selected from CO, CO.sub.2, and O.sub.2.

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